CHX2095 rohs compliant ref. : dsCHX20950036 - 05 feb 10 1/6 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 7.5-30ghz frequency multiplier gaas monolithic microwave ic description the CHX2095 is a frequency multiplier by 4 monolithic circuit. it is designed for a wide range of applications, from military to commercial communication systems. the backside of the chip is both rf and dc grounded. this helps to simplify the assembly process. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. main features broadband performance: 6.25-8.25ghz 11dbm output power for +12dbm input power dc power consumption, 75ma @ 3.5v (rf) chip size: 2.02 x 1.17 x 0.10mm main characteristics tamb = 25c symbol parameter min typ max unit fin input frequency range 6.25 8.25 ghz fout output frequency range 25 33 ghz pin input power 12 dbm pout 4xfin output power for +12dbm input power 8 11 14 dbm esd protection: electrostatic discharge sensitive d evice. observe handling precautions!
CHX2095 7.5- 30ghz frequency multiplier ref. : dsCHX20950036 - 05 feb 10 2/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 electrical characteristics these values are representative on wafer measuremen ts that are made without bonding wires at the rf ports . tamb = +25c, vd = 3.5v vg1 = vg2 = -0.9v, vg3 adjusted for id = 75ma under rf pin = +12dbm. symbol parameter min typ max unit fin input frequency range 6.25 8.25 ghz fout output frequency range 25 33 ghz pin input power 12 dbm pout 4xfin output power for +12dbm input power 8 11 14 dbm pout 1xfin fin level at the output for +12dbm input power (6.25 < fin < 8.25ghz) 0 2 dbm pout 2xfin 2fin level at the output for +12dbm input power (12.5 < 2fin < 16.5ghz) -10 3 dbm pout 3xfin 3fin level at the output for +12dbm input power (18.75 < 3fin < 24.75ghz) 0 12 dbm pout 5xfin 5fin level at the output for +12dbm input power (31.25 < 5fin < 41.25ghz) 0 dbm vswrin input vswr 2.5:1 vswrout output vswr 2.5:1 id bias current 75 ma a wire bond of typically 0.1 to 0.15nh will improve the input and output matching. absolute maximum ratings tamb = +25c symbol parameter values unit vd supply voltage 4.0 v id supply current 150 ma pin input power 20 dbm ta operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of device above anyone of these param eters may cause permanent damage.
7.5-30ghz frequency multiplier CHX2095 ref. : dsCHX20950036 - 05 feb 10 3/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements tamb = +25c & bias conditions: vd = 3.5v, vg1 = vg 2 = -0.9v, vg3 adjusted for id = 75ma under rf pin = +12dbm. -24 -20 -16 -12 -8 -4 0 4 8 12 16 6 6.5 7 7.5 8 8.5 frequency (ghz) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin
CHX2095 7.5- 30ghz frequency multiplier ref. : dsCHX20950036 - 05 feb 10 4/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical jig measurements tamb = +25c & bias conditions: vd = 3.5v, pin = +1 1dbm (jig losses are not corrected and are evaluated to 1.5db at 30ghz) gate voltage vg1=vg2=-0.8v id=70ma -34 -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 5 6 7 8 9 10 frequency (ghz) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin pout@5fin gate voltage vg1=vg2=-0.95v id=75ma -38 -34 -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 5 6 7 8 9 10 frequency (ghz) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin pout@5fin gate voltage vg1=vg2=-1.1v id=80ma -34 -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 5 6 7 8 9 10 frequency (ghz) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin pout@5fin tamb = +25c & bias conditions: vd = 3.5v, id = 75m a under rf nominal pin = +12dbm fin = 7.5ghz (jig losses are not corrected and are evaluated to 1.5db at 30ghz) -38 -34 -30 -26 -22 -18 -14 -10 -6 -2 2 6 10 14 5 6 7 8 9 10 11 12 13 14 input pow er (dbm ) output power (dbm) pout@fin pout@2fin pout@3fin pout@4fin pout@5fin
7.5-30ghz frequency multiplier CHX2095 ref. : dsCHX20950036 - 05 feb 10 5/6 specification s subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data note: supply feed should be capacitively bypassed. 25 m m diameter gold wire is to be prefered. bonding pad positions. (chip thickness: 100m. all dimensions are in micro meters)
CHX2095 7.5- 30ghz frequency multiplier ref. : dsCHX20950036 - 05 feb 10 6/6 specifications subject to change without notice route dpartementale 128, b.p.46 - 91401 orsay ced ex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form: CHX2095-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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